An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

Programmable CMOS/Memristor Threshold Logic

(2013) Ligang Gao et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory

(2012) Gun Hwan Kim et al.   ACS Applied Materials & Interfaces

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Schottky diode with excellent performance for large integration density of crossbar resistive memory

(2012) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Operation Voltage Control in Complementary Resistive Switches Using Heterodevice

(2012) Daeseok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of Complementary RRAM Switching

(2012) Dirk J. Wouters et al.   IEEE ELECTRON DEVICE LETTERS

Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps

(2012) S. Schmelzer et al.   IEEE ELECTRON DEVICE LETTERS

Associative Memory for Nearest-Hamming-Distance Search Based on Frequency Mapping

(2012) Hans Jürgen Mattausch et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Simulation of multilevel switching in electrochemical metallization memory cells

(2012) Stephan Menzel et al.   JOURNAL OF APPLIED PHYSICS

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

(2012) E Linn et al.   NANOTECHNOLOGY

Science and Engineering Beyond Moore's Law

(2012) R. K. Cavin et al.   PROCEEDINGS OF THE IEEE

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Crossbar Logic Using Bipolar and Complementary Resistive Switches

(2011) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

An Analytical Approach for Memristive Nanoarchitectures

(2011) O. Kavehei et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Capacity based nondestructive readout for complementary resistive switches

(2011) S Tappertzhofen et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

(2011) Xianwen Sun et al.   Nanoscale Research Letters

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines

(2010) Kamran Eshraghian et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search Speed

(2009) Wei Xu et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Computing based on the physics of nano devices—A beyond-CMOS approach to human-like intelligent systems

(2009) Tadashi Shibata   SOLID-STATE ELECTRONICS

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

(2008) N. Huby et al.   MICROELECTRONIC ENGINEERING