Dependence of the SET switching variability on the initial state in HfO x -based ReRAM
出版年份 2015 全文链接
标题
Dependence of the SET switching variability on the initial state in HfO
x
-based ReRAM
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 213, Issue 2, Pages 316-319
出版商
Wiley
发表日期
2015-12-18
DOI
10.1002/pssa.201532375
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film
- (2015) Yoshifumi Nishi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Complementary Resistive Switch-Based Crossbar Array Adder
- (2015) Anne Siemon et al. IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films
- (2014) Yoshifumi Nishi et al. IEEE ELECTRON DEVICE LETTERS
- Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
- (2014) Stefano Ambrogio et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
- (2013) Simone Balatti et al. IEEE ELECTRON DEVICE LETTERS
- Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics
- (2013) Luca Vandelli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma
- (2013) Wun-Cheng Luo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Filament Evolution during Set and Reset Transitions in Oxide Resistive Switching Memory
- (2013) Daniele Ielmini et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices
- (2012) M. G. Cao et al. APPLIED PHYSICS LETTERS
- Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
- (2012) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy
- (2012) Shimeng Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
- (2012) E Linn et al. NANOTECHNOLOGY
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Metal oxide resistive memory switching mechanism based on conductive filament properties
- (2011) G. Bersuker et al. JOURNAL OF APPLIED PHYSICS
- Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution
- (2011) Gilberto Medeiros-Ribeiro et al. NANOTECHNOLOGY
- Direct Identification of the Conducting Channels in a Functioning Memristive Device
- (2010) John Paul Strachan et al. ADVANCED MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
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