Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers

标题
Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 70, Issue 11, Pages 6042-6048
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2023-10-13
DOI
10.1109/ted.2023.3319302

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