Sub-5-nm Monolayer GaSe MOSFET with Ultralow Subthreshold Swing and High On -State Current: Dielectric Layer Effects

Device performance and strain effect of sub-5 nm monolayer InP transistors

(2022) Linqiang Xu et al.   Journal of Materials Chemistry C

Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications

(2021) Yiheng Yin et al.   ACS Applied Materials & Interfaces

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

(2021) Shuiyuan Wang et al.   Nature Communications

Sub-10 nm two-dimensional transistors: Theory and experiment

(2021) Ruge Quhe et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

(2021) Lei Tong et al.   SCIENCE

Logic gates based on neuristors made from two-dimensional materials

(2021) Huawei Chen et al.   Nature Electronics

Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications

(2021) Boyu Wang et al.   APPLIED PHYSICS LETTERS

High-specific-power flexible transition metal dichalcogenide solar cells

(2021) Koosha Nassiri Nazif et al.   Nature Communications

Promising Properties of a Sub-5-nm Monolayer MoSi2N4 Transistor

(2021) Junsheng Huang et al.   Physical Review Applied

InSe Schottky Diodes Based on Van Der Waals Contacts

(2020) Qinghua Zhao et al.   ADVANCED FUNCTIONAL MATERIALS

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

(2020) Wenhan Zhou et al.   Physical Review Applied

Reversible transition between bipolar resistive switching and threshold switching in 2D layered III–VI semiconductor GaSe

(2020) Huiying Du et al.   APPLIED PHYSICS LETTERS

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

(2020) Yuanyuan Pan et al.   Physical Review Applied

Self-driven photodetector based on a GaSe/MoSe2 selenide van der Waals heterojunction with the hybrid contact

(2020) Jing Ning et al.   APPLIED PHYSICS LETTERS

First-Principles Predictions of Janus MoSSe and WSSe for FET Applications

(2020) Yu Ding et al.   Journal of Physical Chemistry C

Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications

(2020) Shiying Guo et al.   Physical Review Applied

Two-dimensional transistors with reconfigurable polarities for secure circuits

(2020) Peng Wu et al.   Nature Electronics

Modulating tunneling width and energy window for high-on-current two-dimensional tunnel field-effect transistors

(2020) Wenhan Zhou et al.   Nano Energy

Performance of Monolayer Blue Phosphorene double-gate MOSFETs from First Principles

(2019) Jin Wang et al.   ACS Applied Materials & Interfaces

Small footprint transistor architecture for photoswitching logic and in situ memory

(2019) Chunsen Liu et al.   Nature Nanotechnology

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

(2019) Jiahuan Yan et al.   Advanced Electronic Materials

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Controlling the surface photovoltage on WSe2 by surface chemical modification

(2018) Ro-Ya Liu et al.   APPLIED PHYSICS LETTERS

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

(2018) Ruge Quhe et al.   Physical Review Applied

Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications

(2018) Yang Yang et al.   Nano Energy

High-Performance, Self-Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction

(2017) Quanshan Lv et al.   Advanced Optical Materials

Optimization algorithm for the generation of ONCV pseudopotentials

(2015) Martin Schlipf et al.   COMPUTER PHYSICS COMMUNICATIONS

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

(2014) Jiwon Chang et al.   JOURNAL OF APPLIED PHYSICS

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimized norm-conserving Vanderbilt pseudopotentials

(2013) D. R. Hamann   PHYSICAL REVIEW B

GaS and GaSe Ultrathin Layer Transistors

(2012) Dattatray J. Late et al.   ADVANCED MATERIALS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology