Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

出版年份 2022 全文链接

标题

作者

关键词

出版物

Volume 69, Issue 2, Pages 863-869

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2022-01-11

DOI

10.1109/ted.2021.3138377

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