On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET)

标题
On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET)
作者
关键词
-
出版物
IEEE Journal of the Electron Devices Society
Volume 3, Issue 3, Pages 149-157
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-03-06
DOI
10.1109/jeds.2015.2409303

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