标题
On the Working Mechanisms of Molecules‐Based Van der Waals Dielectrics
作者
关键词
-
出版物
Small
Volume -, Issue -, Pages -
出版商
Wiley
发表日期
2023-06-08
DOI
10.1002/smll.202302230
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- 2D materials for future heterogeneous electronics
- (2022) Max C. Lemme et al. Nature Communications
- Gate Dielectrics Integration for Two‐Dimensional Electronics: Challenges, Advances and Outlook
- (2022) Sijie Yang et al. ADVANCED MATERIALS
- Zeolite-like molecules: Promising dielectrics for two-dimensional semiconductors
- (2022) Lixin Liu et al. Science China-Materials
- The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
- (2021) Theresia Knobloch et al. Nature Electronics
- Identification of two-dimensional layered dielectrics from first principles
- (2021) Mehrdad Rostami Osanloo et al. Nature Communications
- Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals
- (2021) Lixin Liu et al. ADVANCED MATERIALS
- VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code
- (2021) Vei Wang et al. COMPUTER PHYSICS COMMUNICATIONS
- A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film
- (2021) Kailang Liu et al. Nature Electronics
- Transistors based on two-dimensional materials for future integrated circuits
- (2021) Saptarshi Das et al. Nature Electronics
- High dielectric ternary oxides from crystal structure prediction and high-throughput screening
- (2020) Jingyu Qu et al. Scientific Data
- High-throughput density functional perturbation theory and machine learning predictions of infrared, piezoelectric, and dielectric responses
- (2020) Kamal Choudhary et al. npj Computational Materials
- A native oxide high-κ gate dielectric for two-dimensional electronics
- (2020) Tianran Li et al. Nature Electronics
- 2D Semiconductor Transistors with Van der Waals Oxide MoO 3 as Integrated High‐κ Gate Dielectric
- (2020) Brian A. Holler et al. Advanced Electronic Materials
- Inorganic Low k Cage-molecular Crystals
- (2020) Jun Peng et al. NANO LETTERS
- Disorder in van der Waals heterostructures of 2D materials
- (2019) Daniel Rhodes et al. NATURE MATERIALS
- Dielectric disorder in two-dimensional materials
- (2019) Archana Raja et al. Nature Nanotechnology
- Two-dimensional inorganic molecular crystals
- (2019) Wei Han et al. Nature Communications
- High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
- (2018) Binghao Wang et al. CHEMICAL REVIEWS
- Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation
- (2018) Qiang Shi et al. JOURNAL OF LUMINESCENCE
- High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials
- (2017) Ioannis Petousis et al. Scientific Data
- Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
- (2016) Song-Lin Li et al. CHEMICAL SOCIETY REVIEWS
- 2D materials and van der Waals heterostructures
- (2016) K. S. Novoselov et al. SCIENCE
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
- (2014) Hsun-Jen Chuang et al. NANO LETTERS
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- Electronic surface and dielectric interface states on GaN and AlGaN
- (2013) Brianna S. Eller et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Grain boundary-driven leakage path formation in HfO2 dielectrics
- (2011) G. Bersuker et al. SOLID-STATE ELECTRONICS
- A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
- (2010) Stefan Grimme et al. JOURNAL OF CHEMICAL PHYSICS
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