期刊
NANO LETTERS
卷 21, 期 1, 页码 203-208出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03528
关键词
low k; alpha-Sb2O3; Sb4O6 cage; molecular crystal; interlayer dielectric
类别
资金
- ShanghaiTech University [SMN180827]
This study reports a high-crystallinity α-Sb2O3 nanoflakes with remarkably low dielectric constant (k) ranging from 2.0 to 2.5, attributed to the ultralow molecular density and significantly suppressed ionic polarization. Combined with excellent optical band gap, thermal stability, and breakdown strength, alpha-Sb2O3 is considered a promising low k dielectric material.
For the interlayer dielectric in microelectronics, light element compounds are preferably accepted due to less electronic polarization. Here, the nontrivial dielectric nature of the Sb4O6 cage-molecular crystal, known as a-antimony trioxide (alpha-Sb2O3), is reported. The gas-phase synthesized alpha-Sb2O3 nanoflakes are of high crystal quality, from which the abnormal local admittance responses were revealed by scanning microwave impedance microscopy (sMIM). The remarkably low dielectric constant (k), 2.0 similar to 2.5, is corroborated by the analysis of the thickness-dependent sMIM-capacitance signal. In light of the theoretical calculations, the ultralow molecular density and the significantly suppressed ionic polarization are both crucial to the highly reduced k. Combining with the excellent optical band gap, thermal stability, and breakdown strength, alpha-Sb2O3 is a promising low k dielectric.
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