Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors
出版年份 2016 全文链接
标题
Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors
作者
关键词
Solution-process, Oxide Thin-Film Transistor, Dielectric layer, Laminated structure
出版物
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 81, Issue 2, Pages 570-575
出版商
Springer Nature
发表日期
2016-09-21
DOI
10.1007/s10971-016-4205-y
参考文献
相关参考文献
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