Effects of S-vacancy on electrical performance of monolayer TMD nanoribbons field-effect transistor

Zero‐Bias Power‐Detector Circuits based on MoS 2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

(2022) Eros Reato et al.   ADVANCED MATERIALS

DNA-based functionalization of two-dimensional MoS2 FET biosensor for ultrasensitive detection of PSA

(2021) Yi Zhang et al.   APPLIED SURFACE SCIENCE

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

(2020) Jingli Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Vacancy defected blue and black phosphorene nanoribbons as gas sensor of NOx and SOx molecules

(2020) Bahar Meshginqalam et al.   APPLIED SURFACE SCIENCE

Effects of sulfur line vacancy defects on the electronic and optical properties of armchair MoS2 nanoribbon

(2020) Samaneh Soleimani-Amiri et al.   OPTICAL MATERIALS

A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness

(2019) Shoeib Babaee Touski et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

(2019) Sojung Kang et al.   2D Materials

NO-sensing performance of vacancy defective monolayer MoS 2 predicted by density function theory

(2018) Feifei Li et al.   APPLIED SURFACE SCIENCE

Role of vacancy sites and UV-ozone treatment on few layered MoS2 nanoflakes for toxic gas detection

(2017) Debasree Burman et al.   NANOTECHNOLOGY

Fundamental insights into the electronic structure of zigzag MoS2 nanoribbons

(2016) Shansheng Yu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

(2016) Atefeh Nazari et al.   SUPERLATTICES AND MICROSTRUCTURES

Performance Upper Limit of sub-10 nm Monolayer MoS2Transistors

(2016) Zeyuan Ni et al.   Advanced Electronic Materials

Single-Layer MoS2 Electronics

(2015) Dominik Lembke et al.   ACCOUNTS OF CHEMICAL RESEARCH

Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications

(2015) Manouchehr Hosseini et al.   APPLIED PHYSICS LETTERS

Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se)

(2015) Manouchehr Hosseini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Vacancy effects on electronic and transport properties of graphene nanoribbons

(2015) Hai-Yao Deng et al.   PHYSICAL REVIEW B

Theory of strain in single-layer transition metal dichalcogenides

(2015) Habib Rostami et al.   PHYSICAL REVIEW B

Performance Analysis of Strained Monolayer ${\rm MoS}_{2}$ MOSFET

(2013) Amretashis Sengupta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2

(2013) E. Cappelluti et al.   PHYSICAL REVIEW B

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

Tightly bound trions in monolayer MoS2

(2012) Kin Fai Mak et al.   NATURE MATERIALS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Low-temperature photocarrier dynamics in monolayer MoS2

(2011) T. Korn et al.   APPLIED PHYSICS LETTERS

Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects

(2011) C. Ataca et al.   Journal of Physical Chemistry C

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

(2011) Aires Ferreira et al.   PHYSICAL REVIEW B

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Quantum transport modeling of defected graphene nanoribbons

(2010) I. Deretzis et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS