标题
Performance Upper Limit of sub-10 nm Monolayer MoS2Transistors
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 2, Issue 9, Pages 1600191
出版商
Wiley
发表日期
2016-08-03
DOI
10.1002/aelm.201600191
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
- (2016) Hongxia Zhong et al. Scientific Reports
- Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors
- (2015) Ahmet Avsar et al. ACS Nano
- 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
- (2015) Wei Cao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes
- (2015) Yuan Liu et al. NANO LETTERS
- High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
- (2015) Kibum Kang et al. NATURE
- Silicene field-effect transistors operating at room temperature
- (2015) Li Tao et al. Nature Nanotechnology
- Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
- (2014) Saptarshi Das et al. ACS Nano
- Ambipolar Phosphorene Field Effect Transistor
- (2014) Saptarshi Das et al. ACS Nano
- Schottky barrier heights for Au and Pd contacts to MoS2
- (2014) Naveen Kaushik et al. APPLIED PHYSICS LETTERS
- Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
- (2014) Joonki Suh et al. NANO LETTERS
- MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
- (2014) Steven Chuang et al. NANO LETTERS
- Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- (2014) Miguel M. Ugeda et al. NATURE MATERIALS
- Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
- (2014) Britton W. H. Baugher et al. Nature Nanotechnology
- Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
- (2014) Jason S. Ross et al. Nature Nanotechnology
- The valley Hall effect in MoS2 transistors
- (2014) K. F. Mak et al. SCIENCE
- Electrically Switchable Chiral Light-Emitting Transistor
- (2014) Y. J. Zhang et al. SCIENCE
- Atomistic full-band simulations of monolayer MoS2 transistors
- (2013) Jiwon Chang et al. APPLIED PHYSICS LETTERS
- On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit
- (2013) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Where Does the Current Flow in Two-Dimensional Layered Systems?
- (2013) Saptarshi Das et al. NANO LETTERS
- Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
- (2013) Marcio Fontana et al. Scientific Reports
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Breakdown of High-Performance Monolayer MoS2 Transistors
- (2012) Dominik Lembke et al. ACS Nano
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map
- (2012) Khairul Alam et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Sub-10 nm Carbon Nanotube Transistor
- (2012) Aaron D. Franklin et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Designing Electrical Contacts toMoS2Monolayers: A Computational Study
- (2012) Igor Popov et al. PHYSICAL REVIEW LETTERS
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Nobel Lecture: Graphene: Materials in the Flatland
- (2011) K. S. Novoselov REVIEWS OF MODERN PHYSICS
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- MATERIALS SCIENCE: Is Silicon's Reign Nearing Its End?
- (2009) R. F. Service SCIENCE
- Chemical Doping and Electron−Hole Conduction Asymmetry in Graphene Devices
- (2008) Damon B. Farmer et al. NANO LETTERS
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started