Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
出版年份 2022 全文链接
标题
Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
作者
关键词
-
出版物
npj 2D Materials and Applications
Volume 6, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2022-05-09
DOI
10.1038/s41699-022-00306-8
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Graphene oxide based synaptic memristor device for neuromorphic computing
- (2021) Dwipak Prasad Sahu et al. NANOTECHNOLOGY
- Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
- (2021) Sanchali Mitra et al. npj 2D Materials and Applications
- Insights into Multilevel Resistive Switching in Monolayer MoS2
- (2020) Shubhadeep Bhattacharjee et al. ACS Applied Materials & Interfaces
- P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition
- (2020) Mengge Li et al. ACS Applied Materials & Interfaces
- Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity
- (2020) Melkamu Belete et al. Advanced Electronic Materials
- Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
- (2020) Furqan Zahoor et al. Nanoscale Research Letters
- High mobility monolayer MoS2 transistors and its charge transport behaviour under E-beam irradiation
- (2020) Tao Shen et al. JOURNAL OF MATERIALS SCIENCE
- Understanding of Multiple Resistance States by Current Sweeping in MoS2-based Non-volatile Memory Devices
- (2020) Xiaohan Wu et al. NANOTECHNOLOGY
- Two-dimensional materials for next-generation computing technologies
- (2020) Chunsen Liu et al. Nature Nanotechnology
- Insulators for 2D nanoelectronics: the gap to bridge
- (2020) Yury Yu. Illarionov et al. Nature Communications
- Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems
- (2020) Myungsoo Kim et al. Nature Electronics
- Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
- (2020) Shaochuan Chen et al. Nature Electronics
- Dominance of vaccine serotypes in pediatric invasive pneumococcal infections in Portugal (2012–2015)
- (2019) Catarina Silva-Costa et al. Scientific Reports
- Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV
- (2019) Renjing Xu et al. NANO LETTERS
- Graphene and two-dimensional materials for silicon technology
- (2019) Deji Akinwande et al. NATURE
- 2D Layered Materials for Memristive and Neuromorphic Applications
- (2019) Chen‐Yu Wang et al. Advanced Electronic Materials
- Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides
- (2018) Shanshan Wang et al. CHEMICAL SOCIETY REVIEWS
- Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization
- (2018) Kentaro Matsuura et al. JOURNAL OF ELECTRONIC MATERIALS
- In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study
- (2018) Qingkai Qian et al. LANGMUIR
- A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
- (2018) Yun-Feng Kao et al. Nanoscale Research Letters
- Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
- (2018) Nicolas Mounet et al. Nature Nanotechnology
- Trapping IgE in a closed conformation by mimicking CD23 binding prevents and disrupts FcεRI interaction
- (2018) Frederic Jabs et al. Nature Communications
- A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
- (2018) Yun-Feng Kao et al. Nanoscale Research Letters
- Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
- (2018) Vinod K. Sangwan et al. NATURE
- Recommended Methods to Study Resistive Switching Devices
- (2018) Mario Lanza et al. Advanced Electronic Materials
- Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories
- (2018) Feng Zhang et al. NATURE MATERIALS
- Recent development of two-dimensional transition metal dichalcogenides and their applications
- (2017) Wonbong Choi et al. Materials Today
- Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
- (2017) Ruijing Ge et al. NANO LETTERS
- Solution synthesis of few-layer 2H MX2 (M = Mo, W; X = S, Se)
- (2017) Diego Barrera et al. Journal of Materials Chemistry C
- Tricolor R/G/B Laser Diode Based Eye-Safe White Lighting Communication Beyond 8 Gbit/s
- (2017) Tsai-Chen Wu et al. Scientific Reports
- Sirtinol promotes PEPCK1 degradation and inhibits gluconeogenesis by inhibiting deacetylase SIRT2
- (2017) Mingming Zhang et al. Scientific Reports
- Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors
- (2016) Masahiro Matsunaga et al. ACS Nano
- Raman Shifts in Electron-Irradiated Monolayer MoS2
- (2016) William M. Parkin et al. ACS Nano
- Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
- (2016) Chunxue Hao et al. ADVANCED FUNCTIONAL MATERIALS
- Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory
- (2016) Donghee Son et al. ADVANCED MATERIALS
- Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction
- (2016) Gonglan Ye et al. NANO LETTERS
- Hexagonal boron nitride is an indirect bandgap semiconductor
- (2016) G. Cassabois et al. Nature Photonics
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
- (2016) Daniele Ielmini SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- A review of emerging non-volatile memory (NVM) technologies and applications
- (2016) An Chen SOLID-STATE ELECTRONICS
- 2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
- (2016) Zhong Lin et al. 2D Materials
- Nitric Oxide (NO) Mediates the Inhibition of Form-Deprivation Myopia by Atropine in Chicks
- (2016) Brittany J. Carr et al. Scientific Reports
- Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules
- (2015) Kyungjune Cho et al. ACS Nano
- Recent Advances in Two-Dimensional Materials beyond Graphene
- (2015) Ganesh R. Bhimanapati et al. ACS Nano
- Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials
- (2015) Chaoliang Tan et al. CHEMICAL SOCIETY REVIEWS
- RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme
- (2015) Ching-Yi Chen et al. IEEE TRANSACTIONS ON COMPUTERS
- Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
- (2015) Peifu Cheng et al. NANO LETTERS
- Tuning the threshold voltage of MoS2field-effect transistors via surface treatment
- (2015) Wei Sun Leong et al. Nanoscale
- Memory leads the way to better computing
- (2015) H.-S. Philip Wong et al. Nature Nanotechnology
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
- (2015) Vinod K. Sangwan et al. Nature Nanotechnology
- Silicene field-effect transistors operating at room temperature
- (2015) Li Tao et al. Nature Nanotechnology
- The renaissance of black phosphorus
- (2015) Xi Ling et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- A highly efficient flexible dye-sensitized solar cell based on nickel sulfide/platinum/titanium counter electrode
- (2015) Gentian Yue et al. Nanoscale Research Letters
- Defect-Dominated Doping and Contact Resistance in MoS2
- (2014) Stephen McDonnell et al. ACS Nano
- Large-Area Monolayer Hexagonal Boron Nitride on Pt Foil
- (2014) Ji-Hoon Park et al. ACS Nano
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- (2014) Deep Jariwala et al. ACS Nano
- Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application
- (2014) Duy Le et al. Journal of Physical Chemistry C
- Photoluminescence Quenching in Single-Layer MoS2 via Oxygen Plasma Treatment
- (2014) Narae Kang et al. Journal of Physical Chemistry C
- Layered memristive and memcapacitive switches for printable electronics
- (2014) Alexander A. Bessonov et al. NATURE MATERIALS
- Two-dimensional flexible nanoelectronics
- (2014) Deji Akinwande et al. Nature Communications
- The InN epitaxy via controlling In bilayer
- (2014) Jin Zhou et al. Nanoscale Research Letters
- Effect of sulphur vacancy on geometric and electronic structure of MoS2 induced by molecular hydrogen treatment at room temperature
- (2013) Byung Hoon Kim et al. RSC Advances
- Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
- (2012) Ariel Ismach et al. ACS Nano
- From Bulk to Monolayer MoS2: Evolution of Raman Scattering
- (2012) Hong Li et al. ADVANCED FUNCTIONAL MATERIALS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW LETTERS
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Emerging memories: resistive switching mechanisms and current status
- (2012) Doo Seok Jeong et al. REPORTS ON PROGRESS IN PHYSICS
- Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
- (2011) D. Ielmini et al. JOURNAL OF APPLIED PHYSICS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications
- (2009) Hyejung Choi et al. IEEE ELECTRON DEVICE LETTERS
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
- (2008) Tae-Wook Kim et al. NANOTECHNOLOGY
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