Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors

标题
Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors
作者
关键词
-
出版物
ACS Nano
Volume 10, Issue 10, Pages 9730-9737
出版商
American Chemical Society (ACS)
发表日期
2016-10-06
DOI
10.1021/acsnano.6b05952

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