标题
Stable Al
2
O
3
Encapsulation of MoS
2
‐FETs Enabled by CVD Grown h‐BN
作者
关键词
-
出版物
Advanced Electronic Materials
Volume -, Issue -, Pages 2200123
出版商
Wiley
发表日期
2022-04-29
DOI
10.1002/aelm.202200123
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
- (2021) Theresia Knobloch et al. Nature Electronics
- Optoelectronic Synapses Based on Photo‐Induced Doping in MoS 2 /h‐BN Field‐Effect Transistors
- (2021) Mengjian Xu et al. Advanced Optical Materials
- Crystalline insulators for scalable 2D nanoelectronics
- (2021) Y.Y. Illarionov et al. SOLID-STATE ELECTRONICS
- Observation and Optical Control of Saturable Excitonic Behaviors in Monolayer MoS 2
- (2020) Jie Zhang et al. Physica Status Solidi-Rapid Research Letters
- Insulators for 2D nanoelectronics: the gap to bridge
- (2020) Yury Yu. Illarionov et al. Nature Communications
- Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-Layer MoS2
- (2019) Xu Han et al. Journal of Physical Chemistry C
- Atomic Layer Deposition of High-Quality Al2O3 Thin Films on MoS2 with Water Plasma Treatment
- (2019) Binjie Huang et al. ACS Applied Materials & Interfaces
- Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2
- (2019) Huanyao Cun et al. Nano Research
- Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric
- (2019) Jiyue Zou et al. AIP Advances
- Photoresponse in h-BN/MoS2/h-BN thin-film transistor
- (2018) Akihisa Saito et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates
- (2018) Changhee Lee et al. NANOTECHNOLOGY
- Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors
- (2018) Quoc An Vu et al. 2D Materials
- Photoluminescence quenching in monolayer transition metal dichalcogenides by Al2O3 encapsulation
- (2018) Seong Yeoul Kim et al. APPLIED PHYSICS LETTERS
- Air and Water-Stable n-Type Doping and Encapsulation of Flexible MoS2 Devices with SU8
- (2018) Yen-Cheng Kung et al. Advanced Electronic Materials
- Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
- (2017) Yury Yu. Illarionov et al. IEEE ELECTRON DEVICE LETTERS
- Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals
- (2016) Seonyoung Park et al. ACS Applied Materials & Interfaces
- Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
- (2016) Xuming Zou et al. ADVANCED MATERIALS
- Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation
- (2016) Seong Yeoul Kim et al. APPLIED PHYSICS LETTERS
- Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
- (2016) Chris D. English et al. NANO LETTERS
- Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
- (2016) Qingkai Qian et al. Scientific Reports
- Single-Layer MoS2 Electronics
- (2015) Dominik Lembke et al. ACCOUNTS OF CHEMICAL RESEARCH
- Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
- (2015) Gwan-Hyoung Lee et al. ACS Nano
- Al2O3 as a suitable substrate and a dielectric layer for n-layer MoS2
- (2015) Arunima K. Singh et al. APPLIED PHYSICS LETTERS
- Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes
- (2015) Yuan Liu et al. NANO LETTERS
- Raman shift and electrical properties of MoS2bilayer on boron nitride substrate
- (2015) Lijun Li et al. NANOTECHNOLOGY
- Spin Signature of Nonlocal Correlation Binding in Metal-Organic Frameworks
- (2015) T. Thonhauser et al. PHYSICAL REVIEW LETTERS
- van der Waals forces in density functional theory: a review of the vdW-DF method
- (2015) Kristian Berland et al. REPORTS ON PROGRESS IN PHYSICS
- Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates
- (2015) Tao Li et al. AIP Advances
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- (2014) Deep Jariwala et al. ACS Nano
- The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
- (2014) Michele Buscema et al. Nano Research
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
- (2013) Shinichiro Mouri et al. NANO LETTERS
- Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation
- (2013) Junhong Na et al. Nanoscale
- Solvatochromic Effect on the Photoluminescence of MoS2Monolayers
- (2013) Nannan Mao et al. Small
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- From Bulk to Monolayer MoS2: Evolution of Raman Scattering
- (2012) Hong Li et al. ADVANCED FUNCTIONAL MATERIALS
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Symmetry-dependent phonon renormalization in monolayer MoS2transistor
- (2012) Biswanath Chakraborty et al. PHYSICAL REVIEW B
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Al2O3/ZrO2Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics
- (2009) Jens Meyer et al. ADVANCED MATERIALS
- A density functional for sparse matter
- (2009) D C Langreth et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
- (2009) Paolo Giannozzi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- A grid-based Bader analysis algorithm without lattice bias
- (2009) W Tang et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Mobility extraction in SOI MOSFETs with sub 1nm body thickness
- (2009) M. Schmidt et al. SOLID-STATE ELECTRONICS
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