Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
出版年份 2016 全文链接
标题
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 120, Issue 23, Pages 235704
出版商
AIP Publishing
发表日期
2016-12-20
DOI
10.1063/1.4972225
参考文献
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