Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

(2014) David A. Deen et al.   APPLIED PHYSICS LETTERS

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

(2014) David A. Deen et al.   APPLIED PHYSICS LETTERS

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

(2014) Guowang Li et al.   APPLIED PHYSICS LETTERS

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

(2014) Maojun Wang et al.   IEEE ELECTRON DEVICE LETTERS

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

(2013) David J. Meyer et al.   IEEE ELECTRON DEVICE LETTERS

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

(2013) Andrew D. Koehler et al.   IEEE ELECTRON DEVICE LETTERS

Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

(2013) Kai Zhang et al.   JOURNAL OF APPLIED PHYSICS

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

(2013) D.F. Storm et al.   JOURNAL OF CRYSTAL GROWTH

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

(2012) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs

(2012) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

(2011) D. A. Deen et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

(2011) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

(2011) K. Shinohara et al.   IEEE ELECTRON DEVICE LETTERS

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment

(2011) Han-Yin Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization-engineered removal of buffer leakage for GaN transistors

(2010) Yu Cao et al.   APPLIED PHYSICS LETTERS

Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

(2010) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaN∕GaN high-electron-mobility transistors

(2008) David J. Meyer et al.   APPLIED PHYSICS LETTERS

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

(2008) Tom Zimmermann et al.   IEEE ELECTRON DEVICE LETTERS

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

(2007) S.K. Jha et al.   SOLID-STATE ELECTRONICS