Study on the interface electronic properties of AlN(0001)/ β-Ga2O3(100)

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

(2019) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

A Performance Comparison Between $\beta$ -Ga2O3 and GaN HEMTs

(2019) Sandeep Kumar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors

(2018) Chandan Joishi et al.   APPLIED PHYSICS LETTERS

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

(2018) Manikant Singh et al.   IEEE ELECTRON DEVICE LETTERS

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

(2018) S. J. Pearton et al.   JOURNAL OF APPLIED PHYSICS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Ab initio velocity-field curves in monoclinic β-Ga2O3

(2017) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Experimental electronic structure of In2O3and Ga2O3

(2011) Christoph Janowitz et al.   NEW JOURNAL OF PHYSICS