期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1136-1138出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2916427
关键词
Gallium arsenide (GaAs); high gain; photoconductive semiconductor switch; avalanche; repetition rate
资金
- National Natural Science Foundational of China [51877177, 51477140, 51707162]
- Natural Science Basic Research Plan in Shaanxi Province [2019JM594, 2017JM1008]
To explore the stability of gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) with avalanche multiplication mechanism, an interdigitated electrodestructure is presented at 1-kHz excitationby a femtosecond laser. The influences of optical excitation and bias electric field on switching characteristics are investigated. The transient current density and the distribution of electric field are demonstrated by the Monte Carlo simulation. The repetitive switching indicates that the avalanche multiplication mechanism could persist stably at 1-kHz repetition rate operation with this specific electrode structure.
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