MoS 2 /MoTe 2 Heterostructure Tunnel FETs Using Gated Schottky Contacts

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

(2018) Giovanni V. Resta et al.   ACS Nano

Tunneling Transistors based on MoS2/MoTe2 Van der Waals Heterostructures

(2018) Yashwanth Balaji et al.   IEEE Journal of the Electron Devices Society

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

(2018) Zhongxun Guo et al.   Advanced Science

Calibration of Bulk Trap-Assisted Tunneling and Shockley–Read–Hall Currents and Impact on InGaAs Tunnel-FETs

(2017) Quentin Smets et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

KPFM and CAFM based studies of MoS 2 (2D)/WS 2 heterojunction patterns fabricated using stencil mask lithography technique

(2017) Intu Sharma et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions

(2017) Ruiping Zhou et al.   NANO LETTERS

Vertical charge transport through transition metal dichalcogenides – a quantitative analysis

(2017) Yuqi Zhu et al.   Nanoscale

WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment

(2017) Chao Li et al.   NANOTECHNOLOGY

Multifunctional high-performance van der Waals heterostructures

(2017) Mingqiang Huang et al.   Nature Nanotechnology

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

(2016) Shu Nakaharai et al.   ACS Applied Materials & Interfaces

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Insight on the Characterization of MoS2Based Devices and Requirements for Logic Device Integration

(2016) César J. Lockhart de la Rosa et al.   ECS Journal of Solid State Science and Technology

Polarity control in WSe2 double-gate transistors

(2016) Giovanni V. Resta et al.   Scientific Reports

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

(2015) Tania Roy et al.   ACS Nano

Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics

(2015) Aron Szabo et al.   IEEE ELECTRON DEVICE LETTERS

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

(2014) Yuchen Du et al.   APL Materials

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Band Effects on the Transport Characteristics of Ultrascaled SNW-FETs

(2008) E. Gnani et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY