Observation of large in-plane anisotropic transport in van derWaals semiconductor Nb2SiTe4 *

Transport property of inhomogeneous strained graphene*

(2021) Bing-Lan Wu et al.   Chinese Physics B

Topological-Defect-Induced Superstructures on Graphite Surface

(2021) Zi-Lin Ruan et al.   CHINESE PHYSICS LETTERS

Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4

(2020) Yujun Deng et al.   SCIENCE

Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure

(2020) Huixia Fu et al.   Science Advances

Giant-Capacitance-Induced Wide Quantum Hall Plateaus in Graphene on LaAlO3/SrTiO3 Heterostructures

(2020) Ran Tao et al.   CHINESE PHYSICS LETTERS

Tunable Superconductivity in 2H-NbSe2 via in situ Li Intercalation

(2020) Kaiyao Zhou et al.   CHINESE PHYSICS LETTERS

Modulation of the second-harmonic generation in MoS2 by graphene covering

(2020) Chunchun Wu et al.   Chinese Physics B

Edge- and strain-induced band bending in bilayer-monolayer Pb2Se3 heterostructures

(2020) Peng Fan et al.   Chinese Physics B

Raman investigation of layered ZrGeTe4 semiconductor

(2019) Wentao Gong et al.   APPLIED PHYSICS LETTERS

Tunable Bistability in the Goos–Hänchen Effect with Nonlinear Graphene

(2019) Binbin Liu et al.   CHINESE PHYSICS LETTERS

Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials

(2019) Jiaheng Li et al.   Science Advances

Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response

(2019) Mingxing Zhao et al.   ACS Nano

Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility

(2019) Wen-Yu Fang et al.   JOURNAL OF ELECTRONIC MATERIALS

Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties

(2019) Ting Zhang et al.   Journal of Physical Chemistry Letters

Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device

(2019) Shuai Zhang et al.   NANO LETTERS

Unknown

(2018)   ADVANCED MATERIALS

Theory of high-order harmonic generation for gapless graphene

(2018) Óscar Zurrón et al.   NEW JOURNAL OF PHYSICS

Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal

(2018) Sanfeng Wu et al.   SCIENCE

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

(2018) Yujun Deng et al.   NATURE

Optimization algorithm for the generation of ONCV pseudopotentials

(2015) Martin Schlipf et al.   COMPUTER PHYSICS COMMUNICATIONS

Graphene mobility mapping

(2015) Jonas D. Buron et al.   Scientific Reports

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

(2014) Jingsi Qiao et al.   Nature Communications

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

(2013) Wei Wu et al.   APPLIED PHYSICS LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Intrinsic mobility in graphene

(2009) R S Shishir et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER