Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility

标题
Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility
作者
关键词
-
出版物
JOURNAL OF ELECTRONIC MATERIALS
Volume -, Issue -, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2019-10-11
DOI
10.1007/s11664-019-07685-7

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