Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

(2020) Min‐Kyu Kim et al.   ADVANCED MATERIALS

Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights

(2020) Mattia Halter et al.   ACS Applied Materials & Interfaces

Interface Engineering With Polystyrene for High-Performance, Low-Voltage Driven Organic Thin Film Transistor

(2020) Md. Mehedi Hasan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors

(2020) Jewel Kumer Saha et al.   Scientific Reports

Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis

(2020) Jewel Kumer Saha et al.   Nanomaterials

Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process

(2020) Mohit et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

(2020) Houfang Liu et al.   Advanced Science

Indium–Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

(2020) Mengwei Si et al.   ACS Nano

Non-volatile, small-signal capacitance in ferroelectric capacitors

(2020) Yuan-Chun Luo et al.   APPLIED PHYSICS LETTERS

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

(2020) Yiming Qu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology

(2019) Yi-Hsuan Chen et al.   IEEE ELECTRON DEVICE LETTERS

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO

(2019) Yu Liu et al.   Advanced Electronic Materials

Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic Computing

(2019) Chuan-Pu Chou et al.   ACS Applied Materials & Interfaces

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

(2019) Jiali Wang et al.   IEEE ELECTRON DEVICE LETTERS

High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin ${\text {AlO}}_X$ Interfacial Layer

(2018) Meili Xu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Switching Time in Ferroelectric Organic Field-Effect Transistors

(2018) Ryo Sugano et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Crystallization behavior and ferroelectric property of HfO2–ZrO2 films fabricated by chemical solution deposition

(2018) Shuhei Nakayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Bias Stress Stability Improvement in Solution-Processed Low-Voltage Organic Field-Effect Transistors Using Relaxor Ferroelectric Polymer Gate Dielectric

(2017) Wei Tang et al.   IEEE ELECTRON DEVICE LETTERS

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

(2017) Rohit Batra et al.   Journal of Physical Chemistry C

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

(2017) Young Hwan Lee et al.   NANOTECHNOLOGY

A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

(2017) Yuxing Li et al.   IEEE Journal of the Electron Devices Society

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Non-volatile organic memory with sub-millimetre bending radius

(2014) Richard Hahnkee Kim et al.   Nature Communications

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

(2014) Huabin Sun et al.   Scientific Reports

Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation

(2012) Sun Kak Hwang et al.   ADVANCED MATERIALS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

(2010) Changhyun Ko et al.   APPLIED PHYSICS LETTERS

Hardening-softening transition in Fe-doped Pb(Zr,Ti)O3 ceramics and evolution of the third harmonic of the polarization response

(2008) Maxim I. Morozov et al.   JOURNAL OF APPLIED PHYSICS