Bias Stress Stability Improvement in Solution-Processed Low-Voltage Organic Field-Effect Transistors Using Relaxor Ferroelectric Polymer Gate Dielectric

标题
Bias Stress Stability Improvement in Solution-Processed Low-Voltage Organic Field-Effect Transistors Using Relaxor Ferroelectric Polymer Gate Dielectric
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 6, Pages 748-751
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-06-08
DOI
10.1109/led.2017.2696987

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