Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

(2019) K.-T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

(2018) Jimmy Melskens et al.   IEEE Journal of Photovoltaics

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today