Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

(2020) A. A. Gismatulin et al.   APPLIED PHYSICS LETTERS

Conduction mechanisms of TaN/HfOx/Ni memristors

(2019) Vitalii Voronkovskii et al.   Materials Research Express

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

(2019) Zongjie Shen et al.   Micromachines

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide

(2018) Vladimir A. Gritsenko et al.   ACS Applied Materials & Interfaces

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

(2018) S.V. Tikhov et al.   MICROELECTRONIC ENGINEERING

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

(2018) Sungjun Kim et al.   Small

Suppress variations of analog resistive memory for neuromorphic computing by localizing Vo formation

(2018) Wei Wu et al.   JOURNAL OF APPLIED PHYSICS

Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

(2018) Damir R. Islamov et al.   ACTA MATERIALIA

Nano-cone resistive memory for ultralow power operation

(2017) Sungjun Kim et al.   NANOTECHNOLOGY

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

(2017) Sungjun Kim et al.   RSC Advances

Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure

(2017) M. S. Munde et al.   Scientific Reports

Nature of traps responsible for the memory effect in silicon nitride

(2016) V. A. Gritsenko et al.   APPLIED PHYSICS LETTERS

Tuning tunnel barrier in Si 3 N 4 -based resistive memory embedding SiO 2 for low-power and high-density cross-point array applications

(2016) Sungjun Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

(2013) Seok Man Hong et al.   IEEE ELECTRON DEVICE LETTERS

Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications

(2012) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charge transport in dielectrics via tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS