标题
Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 118, Issue 1, Pages 012904
出版商
AIP Publishing
发表日期
2021-01-06
DOI
10.1063/5.0026990
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction
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- (2017) Takahisa Shiraishi et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
- (2016) S. Riedel et al. AIP Advances
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- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
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