Electronic properties of hafnium oxide: A contribution from defects and traps

出版年份 2016 全文链接

标题

作者

关键词

Hafnium oxide, Defects, Oxygen vacancy, Electronic structure, Luminescence, Charge transport, Traps

出版物

Volume 613, Issue -, Pages 1-20

出版商

Elsevier BV

发表日期

2015-12-05

DOI

10.1016/j.physrep.2015.11.002

联系作者

Explore over 38,000 international journals covering a vast array of academic fields.

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now