All-Inorganic Bismuth Halide Perovskite-like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

标题
All-Inorganic Bismuth Halide Perovskite-like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory
作者
关键词
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出版物
ACS Applied Materials & Interfaces
Volume -, Issue -, Pages -
出版商
American Chemical Society (ACS)
发表日期
2018-07-03
DOI
10.1021/acsami.8b07103

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