Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets

(2016) Daniel L. Becerra et al.   APPLIED PHYSICS LETTERS

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

(2016) Benjamin P. Yonkee et al.   OPTICS EXPRESS

Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

(2016) L Y Kuritzky et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm

(2016) Chao Shen et al.   ACS Photonics

High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates

(2015) A. Pourhashemi et al.   APPLIED PHYSICS LETTERS

Going beyond 4 Gbps data rate by employing RGB laser diodes for visible light communication

(2015) Bilal Janjua et al.   OPTICS EXPRESS

450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM

(2015) Yu-Chieh Chi et al.   OPTICS EXPRESS

4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

(2015) Changmin Lee et al.   OPTICS EXPRESS

2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system

(2015) Changmin Lee et al.   OPTICS EXPRESS

Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN

(2015) Benjamin P Yonkee et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication

(2015) Yu-Chieh Chi et al.   Scientific Reports

Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN

(2015) Leah Y. Kuritzky et al.   MRS Communications

Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon

(2014) Thomas Frost et al.   NANO LETTERS

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Optical Gain Spectra of a (0001) InGaN Green Laser Diode

(2013) Mitsuru Funato et al.   Applied Physics Express

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

(2013) A. Pourhashemi et al.   APPLIED PHYSICS LETTERS

Small-signal modulation and differential gain of red-emitting (λ = 630 nm) InGaN/GaN quantum dot lasers

(2013) Thomas Frost et al.   APPLIED PHYSICS LETTERS

Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

(2013) Daniel F. Feezell et al.   Journal of Display Technology

Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate

(2012) Animesh Banerjee et al.   APPLIED PHYSICS LETTERS

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

(2012) J. R. Lang et al.   APPLIED PHYSICS LETTERS

Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes

(2012) T Melo et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

(2011) R. M. Farrell et al.   APPLIED PHYSICS LETTERS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes

(2010) R. M. Farrell et al.   APPLIED PHYSICS LETTERS

100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED

(2009) Hoa Le Minh et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes

(2009) W. G. Scheibenzuber et al.   PHYSICAL REVIEW B

Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

(2008) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm

(2008) Hongping Zhao et al.   OPTICAL AND QUANTUM ELECTRONICS