标题
Anomalous rectification in a purely electronic memristor
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 109, Issue 14, Pages 143505
出版商
AIP Publishing
发表日期
2016-10-05
DOI
10.1063/1.4963887
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Synaptic devices based on purely electronic memristors
- (2016) Ruobing Pan et al. APPLIED PHYSICS LETTERS
- Synaptic Metaplasticity Realized in Oxide Memristive Devices
- (2015) Zheng-Hua Tan et al. ADVANCED MATERIALS
- Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
- (2015) Jung Ho Yoon et al. ADVANCED MATERIALS
- Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores
- (2015) Fei Zhuge et al. APPLIED PHYSICS LETTERS
- Training and operation of an integrated neuromorphic network based on metal-oxide memristors
- (2015) M. Prezioso et al. NATURE
- Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells
- (2015) Fei Zhuge et al. AIP Advances
- Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks
- (2015) Yi Li et al. Advanced Electronic Materials
- Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems
- (2014) Bin Gao et al. ACS Nano
- Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
- (2014) Jung Ho Yoon et al. ADVANCED FUNCTIONAL MATERIALS
- Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
- (2014) Haitao Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments
- (2014) Hao Chen et al. CARBON
- Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy
- (2014) Ronny Knut et al. JOURNAL OF APPLIED PHYSICS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Incremental resistance programming of programmable metallization cells for use as electronic synapses
- (2014) D. Mahalanabis et al. SOLID-STATE ELECTRONICS
- Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell
- (2014) Fei Zeng et al. RSC Advances
- Enabling an Integrated Rate-temporal Learning Scheme on Memristor
- (2014) Wei He et al. Scientific Reports
- Memristive learning and memory functions in polyvinyl alcohol polymer memristors
- (2014) Yan Lei et al. AIP Advances
- Quantum-size effects in hafnium-oxide resistive switching
- (2013) Shibing Long et al. APPLIED PHYSICS LETTERS
- Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor
- (2013) S. G. Hu et al. APPLIED PHYSICS LETTERS
- Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices
- (2013) Shibing Long et al. IEEE ELECTRON DEVICE LETTERS
- Pattern classification by memristive crossbar circuits using ex situ and in situ training
- (2013) Fabien Alibart et al. Nature Communications
- Ultrafast Synaptic Events in a Chalcogenide Memristor
- (2013) Yi Li et al. Scientific Reports
- Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
- (2013) Shibing Long et al. Scientific Reports
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
- (2012) Zhong Qiang Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- Mechanism for resistive switching in an oxide-based electrochemical metallization memory
- (2012) Shanshan Peng et al. APPLIED PHYSICS LETTERS
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM
- (2011) Byung Joon Choi et al. ADVANCED MATERIALS
- An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
- (2011) Shimeng Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- ZnO Schottky barriers and Ohmic contacts
- (2011) Leonard J. Brillson et al. JOURNAL OF APPLIED PHYSICS
- Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
- (2011) Duygu Kuzum et al. NANO LETTERS
- Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments
- (2011) Fei Zhuge et al. NANOTECHNOLOGY
- A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
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