Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Decoding the mechanism of the mechanical transfer of a GaN-based heterostructure via an h-BN release layer in a device configuration

(2014) Gaoxue Wang et al.   APPLIED PHYSICS LETTERS

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

(2014) Masanobu Hiroki et al.   APPLIED PHYSICS LETTERS

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

(2014) Jeehwan Kim et al.   Nature Communications

Vertical Light-Emitting Diode Fabrication by Controlled Spalling

(2013) Stephen W. Bedell et al.   Applied Physics Express

Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy

(2013) Muhammad Iqbal Bakti Utama et al.   Nanoscale

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

(2012) Toshiki Makimoto et al.   Applied Physics Express

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

(2012) S. Gautier et al.   JOURNAL OF CRYSTAL GROWTH

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

(2012) Yasuyuki Kobayashi et al.   NATURE

Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

(2012) Stephen W. Bedell et al.   IEEE Journal of Photovoltaics