Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

MOFs derived Ag/ZnO nanocomposites anode for Zn/Ni batteries

(2019) Weichang Guo et al.   JOURNAL OF SOLID STATE CHEMISTRY

Improved switching reliability achieved in HfO x based RRAM with mountain-like surface-graphited carbon layer

(2018) Ye Tao et al.   APPLIED SURFACE SCIENCE

Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer

(2018) Sridhar Chandrasekaran et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Memristive Effect in Two-Layered Structures Based on Lithium Doped ZnO Films

(2018) A. S. Igityan et al.   Journal of Contemporary Physics-Armenian Academy of Sciences

The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devices

(2018) Sridhar Chandrasekaran et al.   THIN SOLID FILMS

Study of the metal-semiconductor contact to ZnO films

(2018) Yu Yan et al.   VACUUM

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

(2018) Chi-Chang Wu et al.   Materials

Enhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode

(2018) Jiajun Guo et al.   APPLIED PHYSICS LETTERS

A resistive switching memory device with a negative differential resistance at room temperature

(2018) Mayameen S. Kadhim et al.   APPLIED PHYSICS LETTERS

Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

(2018) A. S. Goossens et al.   JOURNAL OF APPLIED PHYSICS

Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

(2018) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

(2018) Feng Zhang et al.   NATURE MATERIALS

Effects of Pyrazine Derivatives and Substituted Positions on the Photoelectric Properties and Electromemory Performance of D–A–D Series Compounds

(2018) Xuejing Song et al.   Materials

Flexible Li-doped ZnO piezotronic transistor array for in-plane strain mapping

(2018) Ming Song et al.   Nano Energy

Influence of metal electrode on the performance of ZnO based resistance switching memories

(2017) Xueting Wang et al.   JOURNAL OF APPLIED PHYSICS

Structural, photoluminescence and XPS properties of Tm 3+ ions in ZnO nanostructures

(2017) G.L. Kabongo et al.   JOURNAL OF LUMINESCENCE

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

(2017) Firman Mangasa Simanjuntak et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Li-doped ZnO nanostructures for the organic light emitting diode application

(2017) Payal Manzhi et al.   VACUUM

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

(2017) Mohammed Zackriya et al.   Scientific Reports

Enhanced stability of filament-type resistive switching by interface engineering

(2017) Y. B. Zhu et al.   Scientific Reports

Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

(2016) Chih-Cheng Shih et al.   IEEE ELECTRON DEVICE LETTERS

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

(2016) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Coexistence of analog and digital resistive switching in BiFeO 3 -based memristive devices

(2016) Tuo Shi et al.   SOLID STATE IONICS

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Bipolar resistance switching characteristics of Ag/ZnO:Li/SnO 2 :F device on glass

(2016) Y. Kafadaryan et al.   THIN SOLID FILMS

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

(2016) Gang Du et al.   AIP Advances

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

(2016) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Characterization and doping effects study of high hole concentration Li-doped ZnO thin film prepared by sol–gel method

(2015) N. Bagheri et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Effects of electrode materials on bipolar and unipolar switching in NiO resistive switching device

(2014) Guokun Ma et al.   MICROELECTRONIC ENGINEERING

Effect of different concentration Li-doping on the morphology, defect and photovoltaic performance of Li–ZnO nanofibers in the dye-sensitized solar cells

(2013) Ripon Bhattacharjee et al.   MATERIALS CHEMISTRY AND PHYSICS

Bipolar resistive switching behaviors in Cr-doped ZnO films

(2013) Ding Lin Xu et al.   MICROELECTRONIC ENGINEERING

Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

(2013) Yang-Shun Fan et al.   THIN SOLID FILMS

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

(2013) Yuanmin Du et al.   AIP Advances

Unipolar resistive switching behavior of Pt/LixZn1−xO/Pt resistive random access memory devices controlled by various defect types

(2012) Chun-Cheng Lin et al.   APPLIED PHYSICS LETTERS

Resistive switching properties of TiO2 film for flexible non-volatile memory applications

(2012) Chun-Chieh Lin et al.   CERAMICS INTERNATIONAL

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS