Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

On the feasibility of p-type Ga2O3

(2018) Alexandros Kyrtsos et al.   APPLIED PHYSICS LETTERS

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

(2018) Jinho Bae et al.   APPLIED PHYSICS LETTERS

A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates

(2018) Houqiang Fu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide

(2018) Hong Chen et al.   OPTICS EXPRESS

Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes

(2018) Ang Li et al.   SUPERLATTICES AND MICROSTRUCTURES

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

(2018) Zhen Li et al.   Nano Research

Tuning the Threshold Voltage of Exfoliated β-Ga2O3Flake-Based Field-Effect Transistors by Photo-Enhanced H3PO4Wet Etching

(2018) Jongha Son et al.   ECS Journal of Solid State Science and Technology

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction

(2017) Gahyun Shin et al.   KOREAN JOURNAL OF CHEMICAL ENGINEERING

Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga 2 O 3 Micro-Flake

(2017) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

(2017) Adam T. Neal et al.   Scientific Reports

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

(2016) Sooyeoun Oh et al.   Journal of Materials Chemistry C

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Temperature-dependent electrical characterization of exfoliatedβ-Ga2O3micro flakes

(2014) R. Mitdank et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels

(2012) J. Khan et al.   APPLIED PHYSICS LETTERS

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Charge Density Waves in Exfoliated Films of van der Waals Materials: Evolution of Raman Spectrum in TiSe2

(2012) Pradyumna Goli et al.   NANO LETTERS

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

(2012) Wei Wei et al.   Nanoscale Research Letters

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Limits to doping in oxides

(2011) J. Robertson et al.   PHYSICAL REVIEW B

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

(2009) Stephan Lany et al.   PHYSICAL REVIEW B