☆ 3.8 Article

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

NANOSCALE RESEARCH LETTERS (2012)

期刊

NANOSCALE RESEARCH LETTERS

卷 7, 期 -, 页码 -

出版社

SPRINGER

DOI: 10.1186/1556-276X-7-562

关键词

beta-Ga2O3/wurtzite GaN heterostructure; Band offset; X-ray photoelectron spectroscopy

类别

Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied

资金

National Key Basic R&D Plan (973 Project) of China [2012CB619301, 2012CB619306]

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Reagent

摘要

A sample of the beta-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the beta-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the beta-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the beta-Ga2O3/GaN structure is 1.40 +/- 0.08 eV.

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