Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
出版年份 2017 全文链接
标题
Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
作者
关键词
<em class=EmphasisTypeItalic >β</em>-Ga<sub>2</sub>O<sub>3</sub>, Nanobelt, Solar-blind Photodiode, p-n Heterojunction, van der Waals Interaction
出版物
KOREAN JOURNAL OF CHEMICAL ENGINEERING
Volume 35, Issue 2, Pages 574-578
出版商
Springer Nature
发表日期
2017-12-07
DOI
10.1007/s11814-017-0279-7
参考文献
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