Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

(2013) Amit Prakash et al.   Nanoscale Research Letters

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

(2013) Amit Prakash et al.   Nanoscale Research Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors

(2011) John Paul Strachan et al.   NANOTECHNOLOGY

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology