Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage

(2014) Xi Wang et al.   NANO LETTERS

Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures

(2014) Sang Young Lee et al.   Journal of Materials Chemistry C

Structural Evolution and the Control of Defects in Atomic Layer Deposited HfO2–Al2O3 Stacked Films on GaAs

(2013) Yu-Seon Kang et al.   ACS Applied Materials & Interfaces

Optical Constants of Amorphous, Transparent Titanium-Doped Tungsten Oxide Thin Films

(2013) C. V. Ramana et al.   ACS Applied Materials & Interfaces

Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

(2013) G. K. Dalapati et al.   ACS Applied Materials & Interfaces

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

(2013) L. S. Wang et al.   APPLIED PHYSICS LETTERS

Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

(2013) Gang He et al.   SURFACE SCIENCE REPORTS

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

(2013) Gang He et al.   Science of Advanced Materials

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

(2013) Gang He et al.   APL Materials

N-Doped Graphene-SnO2 Sandwich Paper for High-Performance Lithium-Ion Batteries

(2012) Xi Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

(2012) Takuya Hoshii et al.   JOURNAL OF APPLIED PHYSICS

Interfacial, optical properties and band offsets of HfTiON thin films with different nitrogen concentrations

(2011) M. Liu et al.   JOURNAL OF APPLIED PHYSICS

Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications

(2011) Minha Seo et al.   JOURNAL OF MATERIALS CHEMISTRY

Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor

(2011) G He et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer

(2010) F. Ji et al.   IEEE ELECTRON DEVICE LETTERS

Composition dependence of band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100)

(2010) Cong Ye et al.   JOURNAL OF APPLIED PHYSICS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Investigation on GaAs surface treated with dimethylaluminumhydride

(2009) Hong-Liang Lu et al.   APPLIED PHYSICS LETTERS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks

(2009) G. He et al.   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

In[sub 0.53]Ga[sub 0.47]As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and LaAlO[sub 3] gate dielectrics

(2009) Han Zhao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

(2008) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

(2008) X. J. Wang et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

(2008) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Composition dependence of electronic structure and optical properties of Hf1−xSixOy gate dielectrics

(2008) G. He et al.   JOURNAL OF APPLIED PHYSICS

Structure, composition and evolution of dispersive optical constants of sputtered TiO2 thin films: effects of nitrogen doping

(2008) G He et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS