The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

出版年份 2008 全文链接

标题

The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

作者

关键词

-

出版物

APPLIED PHYSICS LETTERS

Volume 92, Issue 12, Pages 122901

出版商

AIP Publishing

发表日期

2008-03-25

DOI

10.1063/1.2903097

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

© Peeref 2019-2024. All rights reserved.