High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures
出版年份 2014 全文链接
标题
High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 105, Issue 9, Pages 092105
出版商
AIP Publishing
发表日期
2014-09-06
DOI
10.1063/1.4894643
参考文献
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