Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

(2012) Youngbae Ahn et al.   JOURNAL OF APPLIED PHYSICS

Influence of process parameters on properties of reactively sputtered tungsten nitride thin films

(2012) Maria L. Addonizio et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices

(2012) Sharif Md. Sadaf et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Bipolar resistive switching memory using bilayer TaOx/WOx films

(2012) A. Prakash et al.   SOLID-STATE ELECTRONICS

Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

(2011) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

(2011) Chang Bum Lee et al.   IEEE ELECTRON DEVICE LETTERS

In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

(2011) Takahiro Sano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition

(2011) C.G. Jin et al.   VACUUM

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

(2010) June Sik Kwak et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag–Al alloy top electrodes

(2010) R. Yang et al.   JOURNAL OF APPLIED PHYSICS

High-speed and localized resistive switching characteristics of double-layer SrZrO3memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance-switching properties of La0.67Ca0.33MnO3 thin films with Ag–Al alloy top electrodes

(2009) R. Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Role of TaON interface for CuxO resistive switching memory based on a combined model

(2009)   APPLIED PHYSICS LETTERS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3

(2009) T. Menke et al.   JOURNAL OF APPLIED PHYSICS

Improved resistive switching properties in stacked structures

(2009) X.J. Liu et al.   SOLID STATE COMMUNICATIONS

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films

(2008) Young Ho Do et al.   JOURNAL OF APPLIED PHYSICS

Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

(2008) N Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY