Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
出版年份 2013 全文链接
标题
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
作者
关键词
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出版物
AIP Advances
Volume 3, Issue 7, Pages 072112
出版商
AIP Publishing
发表日期
2013-07-12
DOI
10.1063/1.4815972
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