The van der Waals epitaxy of Bi2Se3on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator

标题
The van der Waals epitaxy of Bi2Se3on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator
作者
关键词
-
出版物
NEW JOURNAL OF PHYSICS
Volume 12, Issue 10, Pages 103038
出版商
IOP Publishing
发表日期
2010-10-27
DOI
10.1088/1367-2630/12/10/103038

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