标题
Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-07-26
DOI
10.1038/srep30449
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
- (2015) Gwan-Hyoung Lee et al. ACS Nano
- In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition
- (2015) Qinke Wu et al. Nanoscale
- Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films
- (2015) Likai Li et al. Nature Nanotechnology
- Effects of dielectric material properties on graphene transistor performance
- (2015) Sung Kyu Jang et al. SOLID-STATE ELECTRONICS
- High-quality sandwiched black phosphorus heterostructure and its quantum oscillations
- (2015) Xiaolong Chen et al. Nature Communications
- Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains
- (2015) Qinke Wu et al. Scientific Reports
- Catalytic Transparency of Hexagonal Boron Nitride on Copper for Chemical Vapor Deposition Growth of Large-Area and High-Quality Graphene
- (2014) Min Wang et al. ACS Nano
- All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
- (2014) Saptarshi Das et al. NANO LETTERS
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Germanium Based Field-Effect Transistors: Challenges and Opportunities
- (2014) Patrick Goley et al. Materials
- Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment
- (2014) Freddie Withers et al. Scientific Reports
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation
- (2013) Jia-Bao Sun et al. Chinese Physics B
- EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection
- (2013) Liangliang Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Fabrication and Characterization of High-Mobility Graphene p–n–p Junctions Encapsulated by Hexagonal Boron Nitride
- (2013) Satoru Masubuchi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride
- (2013) Insun Jo et al. NANO LETTERS
- Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
- (2013) Mei Yin Chan et al. Nanoscale
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
- (2012) Ki Kang Kim et al. ACS Nano
- Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
- (2012) Ariel Ismach et al. ACS Nano
- Challenges and opportunities in advanced Ge pMOSFETs
- (2012) E. Simoen et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
- (2012) Liam Britnell et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- (2012) L. Britnell et al. SCIENCE
- High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
- (2011) Tomonori Nishimura et al. Applied Physics Express
- Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition
- (2011) Ki Kang Kim et al. NANO LETTERS
- Academic and industry research progress in germanium nanodevices
- (2011) Ravi Pillarisetty NATURE
- Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride
- (2011) Jiamin Xue et al. NATURE MATERIALS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Multicomponent fractional quantum Hall effect in graphene
- (2011) C. R. Dean et al. Nature Physics
- Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition
- (2010) Yumeng Shi et al. NANO LETTERS
- Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
- (2010) Li Song et al. NANO LETTERS
- Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst
- (2010) Sreekar Bhaviripudi et al. NANO LETTERS
- Thermal transport in hexagonal boron nitride nanoribbons
- (2010) Tao Ouyang et al. NANOTECHNOLOGY
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
- (2009) Akira Toriumi et al. MICROELECTRONIC ENGINEERING
- Selective Sputtering and Atomic Resolution Imaging of Atomically Thin Boron Nitride Membranes
- (2009) Jannik C. Meyer et al. NANO LETTERS
- Thickness-dependent bending modulus of hexagonal boron nitride nanosheets
- (2009) Chun Li et al. NANOTECHNOLOGY
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- (2009) X. Li et al. SCIENCE
- Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE
- (2008) Y. Kobayashi et al. JOURNAL OF CRYSTAL GROWTH
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started