期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3533767
关键词
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资金
- NSF [DMR-0907385]
- ARL [W911NF-07-2-0046]
- McMinn Endowment at Vanderbilt University
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [907385] Funding Source: National Science Foundation
Oxidation of SiC with the incorporation of Na in the gate oxide was recently found to lead to significantly enhanced electron mobilities in the SiC inversion layer but the underlying mechanism has remained elusive. Here, we report a combination of density functional first-principles calculations and experiments. The new findings demonstrate that neutral Na is essentially a spectator impurity that occupies near interfacial interstitial sites and does not interact with the interface or with interfacial defects. Na ions, however, introduce an effective mass hydrogenic impurity band at the edge of the SiC conduction band that can account for the observed effects. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3533767]
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