Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

出版年份 2008 全文链接

标题

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

作者

关键词

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出版物

JOURNAL OF APPLIED PHYSICS

Volume 103, Issue 12, Pages 124513

出版商

AIP Publishing

发表日期

2008-06-25

DOI

10.1063/1.2940736

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