Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

标题
Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor
作者
关键词
-
出版物
Journal of Materials Chemistry C
Volume 3, Issue 4, Pages 854-860
出版商
Royal Society of Chemistry (RSC)
发表日期
2014-11-20
DOI
10.1039/c4tc01568a

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