High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates

Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

(2014) A. M. Mahajan et al.   SEMICONDUCTORS

Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

(2013) ANIL G KHAIRNAR et al.   BULLETIN OF MATERIALS SCIENCE

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

(2012) A.G. Khairnar et al.   SOLID STATE SCIENCES

Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

(2009) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today