Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

标题
Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology
作者
关键词
-
出版物
SOLID STATE SCIENCES
Volume 15, Issue -, Pages 24-28
出版商
Elsevier BV
发表日期
2012-09-30
DOI
10.1016/j.solidstatesciences.2012.09.010

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now