Article
Engineering, Electrical & Electronic
Lixing Zhou, Jialu Cui, Xiaolei Wang, Shiwei Feng
Summary: This study investigates the distribution of interface state density (D-it) at the oxide/Ge interface for Ge metal-oxide-semiconductor devices by studying the effects of different GeOx thicknesses and post-deposition annealing (PDA) ambient using ozone oxidation. The results show that increasing the GeOx thickness decreases Dit at the GeOx/Ge interface. Additionally, PDA in N-2 slightly increases Dit, while PDA in O-2 decreases it. X-ray photoelectron spectroscopy (XPS) analysis reveals that the content of Ge3+ oxide component increases with increasing GeOx thickness. Furthermore, first-principles calculations demonstrate that the removal of trap states within the Ge band gap is observed in the Ge1+Ge3+/Ge structure compared to the Ge1+Ge2+/Ge structure, which agrees with the experimental results. This study offers new insights into the passivation mechanism at the semiconductor/oxide interface.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Ceramics
Zhipeng Yin, Shengsheng Wei, Jiao Bai, Weiwei Xie, Fuwen Qin, Dejun Wang
Summary: We propose an ECR ozone plasma re-oxidation annealing (ROA) method that can introduce high-concentration and high-reactivity O atoms to eliminate defects near the SiC/SiO2 interface with low temperature. The results show that this method can effectively improve the electrical performance of SiC MOS capacitors and optimize the elemental distribution and morphology of the interface region. The effects of temperature and oxygen element on the near-interface properties of SiC MOS capacitors are also discussed in this paper.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide
Summary: Boron-doped diamond (B-diamond) MOS capacitors and MOSFETs were fabricated and characterized using an atomic layer deposition (ALD) technique with ozone as the oxygen precursor. The Al2O3 (ozone)/B-diamond MOS capacitor showed a leakage current density of 2.7 x 10(-5) A/cm(2) at -9.0 V. Compared to the Al2O3 (water)/B-diamond MOS capacitor, the Al2O3 (ozone)/B-diamond MOS capacitor exhibited no residual capacitance and an improved negative flat band voltage shift. The Al2O3 (ozone)/B-diamond MOSFET demonstrated a high ON/OFF ratio of around 108, which is significantly higher than the previous Al2O3 (water)/B-diamond MOSFET. Additionally, the Al2O3 (ozone)/B-diamond MOSFET remained functional with an ON/OFF ratio greater than 10(6) even after annealing at 500 degrees C for 10 hours.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yi-Ting Cheng, Hsien-Wen Wan, Tien-Yu Chu, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong
Summary: Through three cycles of O-2 exposure and annealing, the GeOx content on the Si/Ge surface was reduced, leading to a decrease in electron traps and better utilization of high-kappa material.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Agata Piacentini, Damiano Marian, Daniel S. Schneider, Enrique Gonzalez Marin, Zhenyu Wang, Martin Otto, Barbara Canto, Aleksandra Radenovic, Andras Kis, Gianluca Fiori, Max C. Lemme, Daniel Neumaier
Summary: This study reports a scalable encapsulation approach for MoS2 FETs, where h-BN monolayers are employed as a barrier layer to significantly reduce charge transfer and exhibit very low hysteresis even under ambient operating conditions.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Yu Fu, Shozo Kono, Hiroshi Kawarada, Atsushi Hiraiwa
Summary: MOS capacitors with C-Si-O diamond as semiconductors and SiO2/Al2O3 as gate insulators were fabricated and characterized, showing excellent electrical performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
Jungmin Park, Hyojung Kim, Pyungho Choi, Bohyeon Jeon, Jongyoon Lee, Changyong Oh, Bosung Kim, Byoungdeog Choi
Summary: This study compared the electrical and stability characteristics of Al2O3 as a gate insulator deposited by various atomic layer deposition methods in a-IGZO thin film transistors. The H2O device exhibited superior initial electrical characteristics but reduced stability under negative bias illumination stress compared to the O-2 LP and O-2 SP devices.
ELECTRONIC MATERIALS LETTERS
(2021)
Article
Multidisciplinary Sciences
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Summary: This study used a newly developed integrated-charge technique to measure the density of active NITs in commercial SiC MOSFETs, and found that NITs can trap about 10% of channel electrons.
SCIENTIFIC REPORTS
(2022)
Article
Chemistry, Multidisciplinary
Anna S. Eremina, Ilya M. Gavrilin, Nikolay S. Pokryshkin, Alexander Yu Kharin, Alexander Syuy, Valentin S. Volkov, Valery G. Yakunin, Sergei S. Bubenov, Sergey G. Dorofeev, Sergey A. Gavrilov, Victor Yu Timoshenko
Summary: Layers of germanium nanowires were grown on titanium foils using metal-assisted electrochemical reduction. The addition of sodium silicate improved the crystallinity and size of the nanowires. Ge nanowire films were prepared by removing and redepositing the nanowires, and their electrical conductivity was studied. The presence of silicon impurities in the nanowires affected the conductivity, and the films exhibited a strong sensor response to different liquid vapors.
Article
Engineering, Electrical & Electronic
S. Boubenia, G. Lefevre, M. Legallais, S. Labau, F. Bassani, M. B. Hachemi, G. Ghibaudo, B. Salem
Summary: This study investigates the influence factors of the physical, chemical, and electrical properties of PEALD Al2O3 thin films on a silicon substrate. The results show that the structural, electrical, and chemical properties of the films can be tuned by adjusting the substrate bias. Additionally, the composition of the interfacial layer can be controlled by the applied substrate bias. These findings are important for the application of high-k materials.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
Zhen Zhang, Chi Yan, Cui Liu, Xiaojun Ye, Xiao Yuan, Hongbo Li
Summary: This study developed a strategy for the PEALD of nanoscale Al2O3 films on PET substrates and improved the film performance through dopamine modification. The results showed that dopamine could act as a "bridge" between polymers and functional films.
Article
Engineering, Electrical & Electronic
Partha Sarathi Padhi, R. S. Ajimsha, Sanjay Kumar Rai, Aniruddha Bose, Pankaj Misra
Summary: To address leakage current issues in single layer oxide thin films, Al2O3/TiO2/Al2O3 (ATA) nano-stacks were fabricated using atomic layer deposition technique. By introducing 1-5 nm barrier layers, leakage paths were reduced and charge carriers were trapped at the interfaces, resulting in improved leakage current density, breakdown field, and dielectric loss. The ATA structure with a thickness of approximately 1 nm demonstrated high capacitance density, low dielectric loss, and low leakage current density, making it a promising material for energy storage and gate dielectric applications.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Kuan-Wun Lin, Jenn-Gwo Hwu
Summary: This study investigated the influence of local oxide thinning (LOT) spots on the electrostatics of MOS capacitors, finding that the introduction of LOT spots causing significant gate leakage leads to severe deep depletion (DD) above threshold, making the capacitors inapplicable for MOSFETs. The research also analyzed the effects of capacitor size, spot size, and spot thickness on the DD behavior, demonstrating the high impact of LOT spots on device operations and emphasizing the importance of controlling oxide structural defects.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Seungheon Shin, Kyoung Hwa Kim, Gang Seok Lee, Jae Hak Lee, Hyung Soo Ahn, Ho - Young Cha
Summary: This study investigates the electrical properties of 2H-Si semiconductors using a hot-probe measurement. The results show that unintentionally doped 2H-Si microwires have n-type characteristics, and a heterojunction PN diode is successfully fabricated.
RESULTS IN PHYSICS
(2022)
Article
Physics, Applied
Ruben Alcala, Claudia Richter, Monica Materano, Patrick D. Lomenzo, Chuanzhen Zhou, Jacob L. Jones, Thomas Mikolajick, Uwe Schroeder
Summary: This paper discusses the comparison of O-3 and O-2 plasma used as the oxygen source in an atomic layer deposition process for Hf1-xZrxO2 films within the full compositional range. By combining structural and electrical characterization methods, insights are gained on the influence of each of the oxygen sources on the crystalline phase formation during deposition of Hf1-xZrxO2 films, and these observations are then correlated to the material's behavior regarding its ferroelectric and electrical properties.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Namrata B. Pawar, Yogesh S. Mhaisagar, Anil S. Gaikwad, Ashok M. Mahajan
Article
Engineering, Electrical & Electronic
Khushabu S. Agrawal, Vilas S. Patil, Anil G. Khairnar, Ashok M. Mahajan
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2017)
Article
Engineering, Electrical & Electronic
Swati A. Gupta, Anil S. Gaikwad, Ashok M. Mahajan
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2017)
Article
Materials Science, Multidisciplinary
V. S. Patil, K. S. Agrawal, A. G. Khairnar, B. J. Thibeault, A. M. Mahajan
MATERIALS RESEARCH BULLETIN
(2017)
Article
Physics, Condensed Matter
A. G. Khairnar, V. S. Patil, K. S. Agrawal, R. S. Salunke, A. M. Mahajan
Article
Physics, Applied
Viral Barhate, Khushabu Agrawal, Vilas Patil, Sumit Patil, Ashok Mahajan
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
(2018)
Article
Materials Science, Multidisciplinary
Khushabu S. Agrawal, Vilas S. Patil, Ashok M. Mahajan
Article
Chemistry, Physical
Anil Gaikwad, Yogesh Mhaisagar, Swati Gupta, Bhavana Joshi, Kandasami Asokan, Ashok Mahajan
Article
Engineering, Electrical & Electronic
Vilas Patil, Khushabu Agrawal, Viral Barhate, Sumit Patil, Ashok Mahajan
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2019)
Article
Materials Science, Multidisciplinary
Viral Nivritti Barhate, Khushabu Santosh Agrawal, Vilas Sidhhanath Patil, Ashok Mahadu Mahajan
Summary: The surface properties of the deposited thin films of metal-organic-decomposed lanthanum cerium oxide (LaCeO2) were improved using microwave-assisted annealing. Post-deposition annealing (PDA) at different microwave powers resulted in enhanced structural and electrical properties of the thin films. The electrical parameters of the Al/LaCeO2/Si stack were found to be improved with the increase in microwave annealing power.
Article
Materials Science, Multidisciplinary
Khushabu S. Agrawal, Viral N. Barhate, Vilas S. Patil, Lalit S. Patil, A. M. Mahajan
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2020)
Article
Engineering, Electrical & Electronic
Viral N. Barhate, Khushabu S. Agrawal, Vilas S. Patil, Sumit R. Patil, Ashok M. Mahajan
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2020)
Article
Engineering, Electrical & Electronic
Sumit R. Patil, Viral N. Barhate, Vilas S. Patil, Khushabu S. Agrawal, Ashok M. Mahajan
Summary: The study investigates the effects of plasma-enhance atomic layer deposition (PEALD) on ZrO2/La2O3/ZrO2 (ZLZ) nanolaminates and the impact of different annealing temperatures. The film annealed at 400 degrees C exhibits a stable pyrochlore phase, resulting in the lowest leakage current density in the MIM capacitor. The research suggests that PEALD nanolaminated high-k MIM capacitors have potential applications in nanoelectronics.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Sumit R. Patil, Vaibhav Y. Borokar, Md. Rasadujjaman, Jing Zhang, Shi J. Ding, Ashok M. Mahajan
Summary: In this study, ZrO2/La2O3/ZrO2/La2O3/ZrO2 (ZLZLZ) penta-layered nanolaminates were deposited using an indigenously developed plasma-enhanced atomic layer deposition (ID-PEALD) system, and utilized as metal-insulator-metal (MIM) capacitors. The nanolaminates exhibited low roughness with a minimum value of 0.2624 nm. The pyrochlore formation of ZLZLZ nanolaminates was studied via X-ray photoelectron spectroscopy, and the nanolaminates were annealed at 400 degrees C. The MIM capacitors achieved a low leakage current density of 9.70 x 10(-7) A/cm^2 and a low barrier height of 0.12 eV, while maintaining a high capacitance of 30.5 fF/μm^2.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Viral N. Barhate, Khushabu S. Agrawal, Vilas S. Patil, Ashok M. Mahajan
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)
(2020)