Article
Physics, Applied
Kuan-Ju Zhou, Min-Chen Chen, Ting-Chang Chang, Shih-Kai Lin, Yu-Bo Wang, Yong-Ci Zhang, Po-Yu Yen, Kui-You Shao, Hui-Chun Huang, Jen-Wei Huang, Simon M. Sze
Summary: This study investigated the changes at the Ti/HfO2 interface in the Ti/HfO2/TiN RRAM device for consecutive bias operations. It was found that abnormal current degradation occurred after the negative forming process and asymmetric bias operations, leading to a decrease in the electrical output of the device. Titanium oxides were formed at the Ti/HfO2 interface after asymmetric bias operations, providing direct evidence for validating the current degradation. The conduction mechanism in both high-resistance and low-resistance states was determined to be hopping conduction.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Summary: This study demonstrates the use of a low-k dielectric layer to alleviate variability, enhance ON/OFF ratio, improve data retention and endurance, and reduce operating voltage in Pt/HfO2/SiO2/TaN memory devices. A conducting model based on variability and ON/OFF ratio enhancement is established to clarify the physical mechanism behind the improved switching properties.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Mohit Kumar, Seung-Ik Han, Yeonghwan Ahn, Yerin Jeon, Jiyeong Park, Hyungtak Seo
Summary: Nontrivial topological polar textures in ferroelectric materials have the potential to revolutionize memory storage and processing units. However, integrating these polar textures into silicon using a large area fabrication technique at room temperature has not been demonstrated yet. In this study, the electric field switchable polar nanotexture is observed at room temperature in HfO2-ZrO2 nanolaminates grown directly onto silicon. A ferroelectric tunnel junction is also designed, showing ultrafast nonvolatile multilevel current switching, long-term durability, and giant tunnel electroresistance. The results indicate a potential approach to high-performance multilevel in-memory processing technology.
Article
Physics, Applied
I Margolin, A. Chouprik, V Mikheev, S. Zarubin, D. Negrov
Summary: The development of the next generation of flexible electronics for biomedical applications requires flexible active elements, such as microcontrollers. Memristors, particularly second-order memristors, are key devices for neuromorphic computing. Among them, ferroelectric memristors show the best reproducibility. Researchers have successfully developed a flexible ferroelectric second-order memristor on a mica substrate, which exhibits high reproducibility and various synaptic functionalities.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Tao Wang, Stefano Brivio, Elena Cianci, Claudia Wiemer, Michele Perego, Sabina Spiga, Mario Lanza
Summary: This study fabricates RS devices based on a TaOx/HfO2 bilayer stack and improves their switching performance and reliability by modifying the structure of the oxide.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Yuan-Dong Xu, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Zhenhua Tang, Wen-Hua Li, Xiao-Bin Guo, Yi-Chun Zhou
Summary: In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO2/Al-ZnO/HfO2) tri-layer structure device was prepared using the sol-gel method. The device exhibited excellent resistive switching (RS) properties, including a high switch ratio, long retention time, and multi-level storage capability. Mechanism analysis revealed that the oxygen-rich vacancy concentration in the Al-ZnO layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the RS performance of the device.
Article
Materials Science, Multidisciplinary
Hojeong Ryu, Sungjun Kim
Summary: The resistive switching behaviors of HfO2-based RRAM in two different oxidants were investigated in this work. The H2O sample exhibited a lower forming voltage and higher endurance in resistive switching, with a smaller capacitor value attributed to higher interface trap sensitivity.
Article
Chemistry, Multidisciplinary
Ejaz Ahmad Khera, Chandreswar Mahata, Muhammad Imran, Niaz Ahmad Niaz, Fayyaz Hussain, R. M. Arif Khalil, Umbreen Rasheed, SungjunKim
Summary: ALD was employed to fabricate a tri-layer structure (HfO2/Al2O3/HfO2) on an ITO transparent electrode for RRAM application. Various characterization techniques were used to examine the microstructure and performance of the device, providing insights for optimizing the stacking of the active resistive switching layer for RRAM applications.
Article
Engineering, Electrical & Electronic
Ekaterina Kondratyuk, Vitalii Mikheev, Anastasia Chouprik
Summary: Ferroelectric hafnium oxide films are attracting interest due to their perfect compatibility with Si technology, scalability, low power consumption, high endurance, and nanosecond switching speed. This study demonstrates that the switching speed strongly depends on the prehistory of memory cells and can vary by several orders of magnitude. The degradation of the switching speed caused by charge injection affects the readout of memory chips.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Alok Ranjan, Hejun Xu, Chaolun Wang, Joel Molina, Xing Wu, Hui Zhang, Litao Sun, Junhao Chu, Kin Leong Pey
Summary: In this study, the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks was investigated using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. The change in conductance of the HfO2/Al2O3 stack during electrical stressing is attributed to the formation of extended nanoscale defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. Two competing physical mechanisms, oxygen ion redistribution and Al species migration, were found to be involved in the switching process. The low diffusion barrier of the active Al electrode causes severe Al migration in the bilayered oxides, leading to device failure in resetting and limiting overall switching performance and material reliability.
APPLIED MATERIALS TODAY
(2023)
Review
Engineering, Electrical & Electronic
Nicolo Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam
Summary: This article reviews the relevant literature on the reliability of doped hafnium oxide (HfO2) based ferroelectric transistors (FeFETs), focusing on the reliability physics of ferroelectric capacitors and the key reliability metrics of FeFETs. The integrative approach connects seemingly unrelated reliability issues and suggests mitigation strategies at the device, circuit, or system level. The article concludes by proposing research opportunities for future development in this field.
PROCEEDINGS OF THE IEEE
(2023)
Article
Mathematics, Interdisciplinary Applications
D. Maldonado, C. Aguilera-Pedregosa, G. Vinuesa, H. Garcia, S. Duenas, H. Castan, S. Aldana, M. B. Gonzalez, E. Moreno, F. Jimenez-Molinos, F. Campabadal, J. B. Roldan
Summary: An in-depth simulation and experimental study has been conducted to analyze the thermal effects on the variability of resistive memories. It was found that the variability for all analyzed magnitudes was higher at low temperatures. The study used kinetic Monte Carlo simulations to explain this higher variability based on the morphology and density changes of conductive filaments observed at low temperatures.
CHAOS SOLITONS & FRACTALS
(2022)
Article
Computer Science, Information Systems
Mamathamba Kalishettyhalli Mahadevaiah, Eduardo Perez, Marco Lisker, Markus Andreas Schubert, Emilio Perez-Bosch Quesada, Christian Wenger, Andreas Mai
Summary: In this study, the resistive switching properties of HfO2 based 1T-1R memristive devices were modified by adding ultra-thin layers of Al2O3. Three different types of memristive stacks were fabricated and the switching properties were discussed in terms of forming voltages, low resistance state, high resistance state, and their variabilities. The experimental I-V characteristics of set and reset operations were evaluated using the quantum point contact model, and the properties of the conduction filament in the on and off states were discussed based on the model parameters obtained from the QPC fit.
Article
Materials Science, Multidisciplinary
Alexandre Silva, Ignasi Fina, Florencio Sanchez, Jose P. B. Silva, Luis Marques, Veniero Lenzi
Summary: We investigated the influence of La content on the structural and ferroelectric properties of epitaxial HfO2 films. It was found that 2-5 at. % La-doped HfO2 films exhibit optimum remanent polarization and reduced coercive field. Density functional theory calculations supported the experimental results and revealed that the polarization switching in epitaxial La:HfO2 films can be understood based on the synergetic contribution of a non-ferroelectric monoclinic phase and La doping itself.
MATERIALS TODAY PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Chandreswar Mahata, Muhammad Ismail, Dae Hwan Kim, Sungjun Kim
Summary: The reliable resistive switching performance of nanocrystalline-HfO2 in amorphous-HfOx has been demonstrated in the TaN/nc-HfO2/ITO memristor structure. The presence of nc-HfO2 and non-stoichiometric HfOx in the switching layer was confirmed using TEM and XPS. The narrowing of conductive filaments in an atomic scale under the influence of nc-HfO2 allows for the control of quantized conductance. Different current compliance and RESET stop voltages were found to enhance the resistive switching performances with multilevel resistance states behavior.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2022)
Article
Physics, Applied
Magali Putero, Marie-Vanessa Coulet, Christophe Muller, Carsten Baehtz, Simone Raoux, Huai-Yu Cheng
APPLIED PHYSICS LETTERS
(2016)
Article
Physics, Applied
Philippe Ferrandis, Matthew Charles, Yannick Baines, Julien Buckley, Gennie Garnier, Charlotte Gillot, Gilles Reimbold
JAPANESE JOURNAL OF APPLIED PHYSICS
(2017)
Article
Multidisciplinary Sciences
Yannick Baines, Julien Buckley, Jerome Biscarrat, Gennie Garnier, Matthew Charles, William Vandendaele, Charlotte Gillot, Marc Plissonnier
SCIENTIFIC REPORTS
(2017)
Article
Physics, Applied
Magali Putero, Marie-Vanessa Coulet, Christophe Muller, Guy Cohen, Marinus Hopstaken, Carsten Baehtz, Simone Raoux
APPLIED PHYSICS LETTERS
(2014)
Article
Physics, Applied
Emilie Faivre, Roxane Llido, Magali Putero, Lahouari Fares, Christophe Muller
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
(2014)
Article
Engineering, Electrical & Electronic
Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, Jacques-Olivier Klein, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Damien Querlioz, Nesrine Ben Romdhane, Dafine Ravelosona, Claude Chappert
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2014)
Article
Engineering, Electrical & Electronic
Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, Thomas Cabout, Eric Jalaguier
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2014)
Article
Computer Science, Theory & Methods
W. S. Zhao, J. M. Portal, W. Kang, M. Moreau, Y. Zhang, H. Aziza, J. -O Klein, Z. H. Wang, D. Querlioz, D. Deleruyelle, M. Bocquet, D. Ravelosona, C. Muller, C. Chappert
JOURNAL OF PARALLEL AND DISTRIBUTED COMPUTING
(2014)
Article
Energy & Fuels
Rene Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jerome Biscarrat, Veronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica, Ferdinando Iucolano
Summary: This study presents an analytical model for investigating the evolution of threshold voltage in MIS-GATE transistors fabricated on GaN-silicon substrate. The model allows for the extraction of different trap energy levels, which have been found to be well correlated with impurity and vacancy sites in GaN epitaxy.
Article
Energy & Fuels
Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Remont, Herve Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Veronique Sousa
Summary: This paper investigates the temperature dependence of GaN-on-Si power transistors, particularly focusing on the depletion voltage caused by progressive depletion of the 2DEG under device field plates. The study examines variations in epitaxial growth and analyzes the origin of the deep acceptor trap responsible for the temperature dependence. By adjusting TCAD parameters and comparing with existing literature, the origin is determined to be a gallium vacancy tied to oxygen atom(s) on the N site.
Article
Energy & Fuels
Florian Rigaud-Minet, Christophe Raynaud, Julien Buckley, Matthew Charles, Patricia Pimenta-Barros, Romain Gwoziecki, Charlotte Gillot, Veronique Sousa, Herve Morel, Dominique Planson
Summary: Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Electron traps in AlGaN/GaN-on-Si power diodes were investigated using DLTFS, and seven different traps corresponding to point defects were identified. Two new traps related to etching were reported, while others were proposed to be related to carbon and nitrogen vacancies or carbon. Crystal surface recombination, native defects, and nitrogen antisite were also likely origins of the identified traps.
Article
Energy & Fuels
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, Rene Escoffier, Julien Buckley
Summary: For high electron mobility transistors (HEMTs) based on AlGaN/GaN heterojunctions, the commonly used p-GaN gate topology is being replaced by fully recessed MIS gate GaN power transistors or MOSc-HEMTs due to their wider voltage swing and reduced gate leakage current. However, the etching process used to deplete the 2-DEG and achieve a normally-OFF behavior results in defects, traps, and roughness, affecting the stability of the threshold voltage and electron mobility. This paper discusses recent developments in gate recess techniques and surface treatments to optimize the dielectric/GaN interface.
Proceedings Paper
Engineering, Electrical & Electronic
J. Biscarrat, R. Gwoziecki, Y. Baines, J. Buckley, C. Gillot, W. Vandendaele, G. Garnier, M. Charles, M. Plissonnier
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
(2018)
Proceedings Paper
Engineering, Electrical & Electronic
T. Cabout, E. Vianello, E. Jalaguier, H. Grampeix, G. Molas, P. Blaise, O. Cueto, M. Guillermet, J. F. Nodin, L. Perniola, S. Blonkowski, S. Jeannot, S. Denorme, P. Candelier, M. Bocquet, C. Muller
2014 IEEE 6TH INTERNATIONAL MEMORY WORKSHOP (IMW)
(2014)
Proceedings Paper
Engineering, Electrical & Electronic
K. Castellani-Coulie, M. Bocquet, H. Aziza, J. M. Portal, W. Rahajandraibe, C. Muller
2013 14TH IEEE LATIN-AMERICAN TEST WORKSHOP (LATW2013)
(2013)